parameter symbol typ unit BT169D bt169g repetitive peak off-state voltages v drm v rrm 400 600 v average on-state current i t(av) 0.5 a rms on-state current i t(rms) 0.8 a non-repetitive peak on-state current i tsm 8.0 a max. operating junction temperature t j 110 o c storage temperature t stg -45~150 o c bt169 series general description parameter symbol test conditions min typ max unit BT169D bt169g repetitive peak off-state voltage s v drm v rrm 400 600 v average on-state current i t(av) half sine wave; t mb < 103 o c 0.5 a rms on-state current i t(rms) all conduction angles 0.8 a on-state voltage v t i t =1.0 a 1.20 1.35 v holding current i h v d =12 v; i gt = 0.5 ma 0.5 5 ma latching current i l v d =12 v; i gt = 0.5 ma 0.6 6 ma gate trigger current i gt v d =12 v; i t = 10 ma 15 200 ua gate trigger voltage v gt v d =12 v; i t = 10 ma 0.5 0.8 v thyristors logic level passivated, sensitive gate thyristors ina plastic envelope, intended foruse in general purpose switching and phase control applications. these devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. product specification to-92 absolute maximum ratings electrical characteristics ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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